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| BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES Excellent hFE linearity. Power dissipation:PCM=200mW Production specification 2SC4102W Pb Lead-free APPLICATIONS NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No. 2SC4102W Marking CP/CQ/CR Package Code SOT-323 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 120 120 5 50 200 -55~150 Units V V V mA mW ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Document number: BL/SSSTF037 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Silicon Epitaxial Planar Transistor Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions IC=50A,IE=0 IC=1mA,IB=0 IE=50A,IC=0 VCB=100V,IE=0 VEB=4V,IC=0 VCE=6V,IC=2mA ICE=10mA,IB=1mA VCE=12V, IC= 2mA,f=100MHz VCB=12V,IE=0,f=1MHz Production specification 2SC4102W MIN TYP MAX UNIT 120 120 5 0.5 0.5 180 560 0.5 140 2.5 V MHz pF V V V A A CLASSIFICATION Rank Range Marking OF hFE R 180-390 TR S 270-560 TS Document number: BL/SSSTF037 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Silicon Epitaxial Planar Transistor PACKAGE OUTLINE Plastic surface mounted package Production specification 2SC4102W SOT-323 SOT-323 Dim A B C D E G H J K Min 1.8 1.15 0.15 0.25 1.2 0.02 2.1 Max 2.2 1.35 0.35 0.40 1.4 0.1 2.3 1.0Typical 0.1Typical All Dimensions in mm PACKAGE Device 2SC4102W INFORMATION Package SOT-323 Shipping 3000/Tape&Reel Document number: BL/SSSTF037 Rev.A www.galaxycn.com 3 |
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